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The 800 m2 cleanroom (ISO-class 6) of NanoLab@TU/e is at the disposal of nanoPHAB® with state-of-the-art equipment for epitaxial growth of III-V semiconductor nanostructures and micro/nanoprocessing and inspection of passive and active semicoductor devices.

cleanroom ridAdditional labs with SEM, cryogenic probe stations, nano-prototyping and bonding equipment, allow us to offer also a full spectrum of post-fabrication  electro-optical characterizations. 

These laboratory facilities offer a wide spectrum of opportunities and services for research and development activities in micro and nanophotonics, making nanoPHAB® the ideal partner of universities, research organizations and companies. 



mbe ridMolecular Beam Epitaxy (MBE) reactor Createc SY022, for epitaxial layers growth on GaAs wafers of In, Ga, As and Al with possible dopants as Be and Si. Closed ultrahigh vacuum system with the possibility to inject external gases as NH3, H2 and O2. Wafers with maximal diameter of 2 " can be grown with very low roughness (<0.5nm RMS).


movpe ridMetal Organic Vapour Phase Epitaxy (MOVPE) reactor Aixtron MOVPE 200/4 and 200, for the epitaxial layers growth of In, Ga, As, P, and doping materials Zn, Si, and Fe on InP 2 " wafers at low vacuum (100 mbar) with H2 cariergas. Precursor materials are tertiarybutylphosfine, tertiarybutylarsine, trimethylindium, trimethylgallium, diethylzink, ditertiarybutylsilaan and ferrocene.



sputtering ridSputtering system AJA ATC 1500-F equipped with 4 RF-sputterguns for sputtering of Au, Ti, (Ni), Cr and (Pt) for conformal stepcoverage or reactive gas sputtering of high quality superconducting NbN films (RMS < 0.15nm, TC > 10 K). Wafer size up to 4 " can be processed. 




pecvd ridPlasma-enhanced chemical vapor deposition (PECVD) parallel plate reactor Oxford Plasmalab System 100 Oxide/Nitride, suitable for depositing nitride (Si3H4) and oxide (SiOx) layers for etching mask, isolation, antireflection coating and dielectric photonic components. The depositon temperature can range from 40°C to 450°C (300 °C standard), using wafer up to 6 ".  SiH4/NH3/N2 (SiH4/N2O/N2) gases are used for nitride (oxide).



ebpg5200 vistech rid2Electron Beam Lithography (EBL) equipmentDirect exposure of electron sensitive resists like PMMA, ZEP and HSQ for micro- and nanopatterning with acceleration voltages up to 100 kV and probe current up to 100 nA! Ultra Resolution (5-10 nm) and Speed. Maximum wafer size equal to 4 ".




ma6 ridHigh Resolution Photolithography in vacuum-contact mode is possible thanks to a semi-automatic Karl Suss MA6 contact aligner with 400nm wavelength UV lamp. A resolution of 0.6 micrometer can be achieved by using glass/chromium masks and positive or negative photoresists as HPR504, AZ4533, MaN415, MaN440 spinned in a closed-cover Gyrset Photoresist spinner on wafers up to 4 ".



rie ridReactive Ion Etching (RIE) reactor Oxford PlasmaLab System 100 for etching dielectric materials like Si-Nitride and Si-Oxide on wafer up to 3 ", using photo-resists or EBL resists as masks for waveguide and photonic crystal definitiont. The baseline recipes are based on CHF3/Ochemistry with up to 100% CHF3. SiCl4, CF4 and SF6 ecipes are also available for a wide range of materials. 



icp ridInductively Coupled Plasma (ICP) Oxford instruments PlasmaLab 100 reactor to etch GaAs, InGaAs, AlGaAs, InP, InGaAsP materials with good selectivity with respect of dielectric masks at temperatures ranging from 30ºC to 200ºC with He cooling possibility. 
Wafers up to 3 " can be processed with the available chemistries: Cl2:Ar:H2 Cl2:CH4:H2Cl2:O2Cl2:N2CH4:H2




ICP-RIE plasma etcher, Sentech SI-500 can be configured for processing of a variety of materials, including but not limited to III-V compound semiconductors (GaAs, InP, GaN, InSb), dielectrics, quartz, glass, silicon, silicon compounds (SiC, SiGe), and metals with excellent selectivity and high etching between -20ºC and 300ºC. Wafers up to 200mm can be processed.


evaporators ridElectron beam and thermal metal evaporators are available inside and outisde the cleanroom for high vacuum deposition of single layers or multiple layers stacks of Ti, Pt, Au, Ge, Ni, Zn, Ag, Al in the range 10-400 nm.






Open and closed spinners as well as scanning electron microscopes (SEM), optical microscopes, a surface profilometer, spectral elipsometers, reflectivity measurements setup, a capacitance-voltage (CV) profiler for carrier density and doping profiles measurements after the epitaxial growth and a x-ray photo electron spectrometer (XPS) and difractometer (XRD) are also available. For a full list of our equipment please visit the NanoLab@TU/e website.


ampolla2Any kind of chemical etching, deoxidation or treatment of III-V semiconductors, silicon, dielectric materials and metals are also possible in the chemical benches inside the cleanroom.


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